"A 10 MHz GaNFET Based Isolated High Step-Down DC-DC Converter: Design and Magnetics Investigation "
Thanks Dana,
That paper you kindly show looks like the best thing out there on HF SMPS design. (here it is again)....
"A 10 MHz GaNFET Based Isolated High Step-Down DC-DC Converter: Design and Magnetics Investigation "
Ayk, its good to know where your bridges are before you cross them…..so that you can actually cross them.
The paper details a 20W, 200-300v to 0-28v buck, at 10MHz.
I think even the authors would confess that what they have produced is at best “uncompetitive”, and more realistically, a very poor offering indeed.…..showing that HF SMPS is not yet feasible……what the paper produces is neither cheaper, smaller, or more efficient, than a “standard” ~100kHz solution.
Here are the problems of the 10MHz converter of the kindly provided paper…….
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*..efficiency is only 85.3% maximum.
*…inductor & transformer ferrite pieces are custom made and made of fair-rite 67, which may be in short supply compared to good old 3F3, N87, 3C96, etc etc.
*…the shown design has a fixed frequency of 10MHz, and cannot handle any variation of vin and vout outside of the fixed range.
*…The design of the resonant L and C needs use of a calibrated Agilent 4294A Impedance Analyzer. (many thousands of dollars)
*..A expensive Maxwell 3D simulator is needed to develop the magnetics (it’s a finite element modelling simulator and is very expensive).
*..As page 6 shows, foil windings are necessary…these are going to be custom made , at great expense.
*…As the paper confesses……QUOTE>> There is limited data available on the design of high frequency (HF) and very high frequency (VHF) power magnetics. Power magnetics have high flux drive. For most of the materials, large signal loss data are not available at above a few MHz. <<UNQUOTE
…..So its going to be very difficult, in any HF SMPS design, to select the magnetic material…..becuase there is no data available for showing its characteristics…………and there is no data regarding the tolerance of its characteristics….and the temperature drift etc…so any design of any HF SMPS is going to be a “hope it works” thing, with a likely high field failure rate.
*..The paper is honest enough to confess that high frequency magnetics materials are simply not available at realistic costs for operation at 10MHz plus…….
QUOTE>> With the emergence of GaN and SiC devices, there has been a significant advancement in semiconductor device switching speed, but magnetics has become a primary limitation constraining miniaturization. By increasing the switching frequency of the converter, the absolute value of capacitance and inductance can be reduced but the actual size reduction at very high frequencies depends on the allowable loss power density. Appropriate core material and winding structure have to be selected for these high frequencies to reduce the loss and realize the achievable miniaturization. Emerging thin-film magnetic materials are a good choice for frequencies greater than 10 MHz. These materials are typically alloys with Fe, Co and Ni. But these are not commercially available at economical costs<<UNQUOTE
*..The paper is honest enough to confess that the only way they could drive the primary and secondary FETs at 10MHz was to use a costly Virtex-5 FPGA development board !!.....An FPGA needed just to act as the switching frequency oscillator….this alone makes the entire thing totally un-commercially-viable.
*… The paper is honest enough to confess that the only way they could provide the high side drive was to use batteries!..again, this alone makes the entire thing totally un-commercially-viable.
*.. The paper (pg 9) is honest enough to confess that the expensive simulator that they used to calculate the magnetics parameters was very innacurate compared to what they actually measured with the precision impedance analyser…and that this was due to the under-estimate of parasitic winding capacitance.
*.. The paper (pg 10) is honest enough to confess that the only way that they could get a GaN FET with low enough gate capacitances was to use a 650V part , which has a high Rdson of 220milliohm….and with all the circulating currents you get in resonant converters, this is going to hit efficiency.
*..The paper is honest enough (pg 10) to confess that they need a biopolar gate drive supply in order to ensure proper switching of the GaN FETs at 10MHz.
*…The paper is honest enough to confess that they can only manage output power variation by doing dead time adjustment…this comes with extra complexity and cost….not only that, but with high dead time, the cct current RMS values go up.
*..the 5v max gate drive voltage of the GaN FETs could be breached by ringing in the gate drive…because at this high switching frequency, damping in the gate drive wont be permitted…..so we will likely see dead GaN FETs at some point.
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So this paper details an SMPS which provides for a specification...and does it in a diaboilcally bad fashion.....even a junior EE could do it massively better using the standard approach of today with switching frequencies around say 100kHz.
Every other paper one reads about HF SMPS examples is just as diabolically bad as this......has anyone even heard of any even remotely sensible SMPS being done at 10MHz plus?