spark449062
Newbie
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Hi
I am trying to simulate a parallel plate capacitor with a very thin (~9nm) dielectric.
The shape of the parallel plate capacitor is circular.
The conductors ("perfect conductor" material is assigned to them and "PerfE" boundary conditions are assigned to them) forming the capacitor both have ~1.4um in radius and are 100nm thin.
The dielectric in between has the same radius 1.4um and 9nm thin.
(1) as mesh density is increased by assigning mesh operation on the dielectric, the number of tetrahedra grows very big (several million). Furthermore, the mesh density is pretty high in the conductors forming the capacitor as well. I want to reallocate the computational resource that are being used to form heavy mesh in the conductors to capture behaviors in some other important regions such as corners of the conductor where electric field tends to be intense.
Is there any way that I let HFSS to not mesh inside the conductor to save some resource? They are assigned "perfect conductor" so field inside them are zero anyway.
(2) what would be a mesh size for dielectric to obtain reliable result?
I am trying to simulate a parallel plate capacitor with a very thin (~9nm) dielectric.
The shape of the parallel plate capacitor is circular.
The conductors ("perfect conductor" material is assigned to them and "PerfE" boundary conditions are assigned to them) forming the capacitor both have ~1.4um in radius and are 100nm thin.
The dielectric in between has the same radius 1.4um and 9nm thin.
(1) as mesh density is increased by assigning mesh operation on the dielectric, the number of tetrahedra grows very big (several million). Furthermore, the mesh density is pretty high in the conductors forming the capacitor as well. I want to reallocate the computational resource that are being used to form heavy mesh in the conductors to capture behaviors in some other important regions such as corners of the conductor where electric field tends to be intense.
Is there any way that I let HFSS to not mesh inside the conductor to save some resource? They are assigned "perfect conductor" so field inside them are zero anyway.
(2) what would be a mesh size for dielectric to obtain reliable result?