sjamil02
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Hi All,
I attach the schematic (including dc node voltages) for LDO with two-stage OTA and PMOS power device. In order to get dropout voltage of 35mV, I used the following equation to size up the PMOS. W/L=(2Id)/(kp*vdssat2) and vdssat=35mV. I end up with a very huge PMOS, W/L=469153. The regulation voltage Vreg is set based on the following, Vreg=(1+R2/R1)Vref where Vref=0.9V, R2=3.6k and R1=50k. When I put the circuit together and run dc and ac simulation, from ac simulation the gain is below unity. The nmos (x11) of the output stage of an OTA is in triode (vds=59mV). How do I fix this problem? How to size the PMOS to minimize the size while still be able to achieve vdropout=35mV? It seems from my calculation the size is too big!
Please help.
Thks in advance
sj
I attach the schematic (including dc node voltages) for LDO with two-stage OTA and PMOS power device. In order to get dropout voltage of 35mV, I used the following equation to size up the PMOS. W/L=(2Id)/(kp*vdssat2) and vdssat=35mV. I end up with a very huge PMOS, W/L=469153. The regulation voltage Vreg is set based on the following, Vreg=(1+R2/R1)Vref where Vref=0.9V, R2=3.6k and R1=50k. When I put the circuit together and run dc and ac simulation, from ac simulation the gain is below unity. The nmos (x11) of the output stage of an OTA is in triode (vds=59mV). How do I fix this problem? How to size the PMOS to minimize the size while still be able to achieve vdropout=35mV? It seems from my calculation the size is too big!
Please help.
Thks in advance
sj