At 1GHz you're probably sloching current in and out of the
caps without much "pumping".
At 1V gate drive, your FETs may be a big loss term, you
only can pump forward Vdd-Vt or so.
500nF capacitors are pretty damn big for a little integrated
FET to drive, a DC solution of VOUT=VDD can be reached
but no further pumping is evident - but this might be a
timescale vs capacitor value problem.
Consider making your pump FETs synchronous rather than
making them act like passive diodes. You'll kill the forward
drop that way. But you'll need level shifting of some sort,
which may put you on the wrong side of some isolation
limit perhaps.