λ is best found through simulation. Also are u trying to find the effective channel length or the rechnology channel length. The k u r talking about is it µ Cox W/L ??
UO is µ and from TOX you can calculate Cox by the formula for the parallel plate capacitance Cox = ε εsi / Tox, where ε is 8.854*10^-12 and εsi = 3.9
µ has to be multpled by 10^-4 to get SI units of mobility.
aryajur,εsi=11.9, there is no λ in the most model, in Bsim3V3 model, there may be 4 or 5 parameters is correlative with the channel length, I agree with aryajur that you should do singal MOSFET to find a
experiential value.
Hi.
I think just up to level 3 in MOS models include lambda parameter. after that there are some more detailed parameters to calculate rds. However, for simplification, usually designers express rds as a constant multiplied by 1/L (i.e. rds=a*1/L.) it's an approximation but still useful.
and about µnCox. I agree with others about the way to calculate Cox. U0 is µ0 and you should use a more accurate formula to calculate the µn, but U0 is a good approximation of the real µ.