when you increased the gate resistor to 100ohm what happened is your mosfet switched slower resulting in lower di/dt which resulted in smaller parasitic injected current in to your gate drive circuit. it makes you happy. but the bad side is your mosfet power dissipation just went up A LOT because it spends too long a time in the linear region.
a 100 ohm gate resistor that "solves" the problem is a clear sign that your gate drive design (schematic and layout) is not good. you might be happy with it cause it "works" but in reality it is a bandage solution.
truly, your problem of false turn on due to that noise glitch is super super common in H-bridge topology. it has been solved in a few ways. typically you start with good archetecture of your design and good layout. these things are CRITICAL for H-bridge topoolgy. probably you do not have the skill to make these things good, so you must rely on the next line of defense. make the power supply bi-polar. turn ON at +12V and turn OFF at -5V. now if you ask mosfet to turn OFF, it is held at -5V. so if you get a 4V nuisance spike.. well, the gate is now at -1V, for sure it is still off. Another solution is to change the gate drive IC to one that has a clamp feature. my favourite is TD350. its nice, and you can use the bootstrap gate drive if you want, or, buy a 0.5W isolated non-regulated power supply ifor $7 nstead which would make your circuit 100x more reliable. failing that.. yes put 100ohm gate drive and make sure your mosfets are not too hot.
just some thoughts.
ps. FVM, nice to see you are still around. of all the power electronic questions, i have seen many of your responses and 100% of them are reliably given. i don't know who you are, but you must be a real pro in the field.