Hi,
is there no hope for a P-fet h-bridge?
For sure you can do this. But it means more effort, more time to develop, more chance for the design to fail (there are a lot of application notes for N-FET drivers and all the problems with it are well known and described)
You have a lot more N-FETs to choose than P-FETs. You usually use identical N-FETS for both high side and low side with identical switch on and switch off time, Mind the dead time to avoid cross conduct of both FETs.
Definitely yes. This is one problem by using the standard bootstrap circuit. But for sure you may use an isolated DCDC converter also.
The parameters for the bootstrap device values depend on your FETs, the gate drive circuit and the max. ON time.
For a continous switching PWM of 10kHz or more a 100nF should be sufficient. but you can use a higher value. Ceramic.
The OFF time to charge the bootstrap should be at least in the range of more than 100ns. I´v seen circuits with 20ns. If you can spend 1 us then do so.
(mind that for bootstrap charge you need to actively switch ON the low side FET, both FETs OFF may fail)
All my given values are just to get a clue on where to go. All is application specific.
Best is you show us your circuit and we can help you on this.
Klaus