Hi,
I would like to know what kind of GAURD RING you want to make in multi path like for PMOS or NMOS?
Layer composition depends upon the foundry.
Just defining the generic one
1. For PMOS device
Layer composition -- Diffusion + Nwell + Contact + Metal1
2. For NMOS device
Layer composition -- Diffusion + Pwell + Contact + Metal1
TSMC Example:
1. For PMOS device
Layer composition -- Diff (OD) + Nwell + NP (N Implant) + Contact + Metal1
2. For NMOS device
Layer composition -- Diff (OD) + Pwell + PP (P Implant) + Contact + Metal1
check proper overlap, width etc and construct.
Thanks and regards,
Basu