Genius TCAD Cogenda simulation error

[prasad_dhuri]

Guide regarding Cogenda tcad simulation???????????

 

[Colbhaidh]

Can you be more specific?

 

[prasad_dhuri]

mos structure having gate length in nanometers can b simulated in cogenda or not?
moreover when i simulate the mos structure having different gate material other than sio2 as dilelectric;gate current shows zero ideal value whereas literature says magnitude of gate current though very very small,cant b zero
does dat s/w consider ideal conditions?

 

[Colbhaidh]

Are you usng the commercial version of Cogenda?
The IDEAL value of gate current IS zero ! In reallife it is non zero and depends on many fabrication and stress factors. Simulators are not good at modelling these kinds of leakages and yo would normally match you simulator to your real life values, such that the nex simualtion is closer. The free version of Cogenda is very basic and does ot agree well with commercial simulators in the areas of small currents and leakages (I think I saw a report on nano hub comparing various simulators). Have you considered using Pisces or Floops/Floods?

 

[prasad_dhuri]

I just want to see the transfer chara of mos having high k dielectic and metal gate
can u help in this regard?

 

[prasad_dhuri]

Hello
i need your help regarding simulation using Silvaco
i have read your other posts please help me in followoing problems
i am simulating a 50 nm mos using tio2 as a high k dielectric can u please guide me where ill get the example

 

[Colbhaidh]

h**p://www.silvaco.com/examples/tcad/section24/

This shows a HfO2 gate dielectric but you can change the specifics to match TiO2. I do not have access to a version of Silvaco that is coded for gate dielectrics other than oxide so I am of limited help.

 

[prasad_dhuri]

Thank you very much for your help but i have already seen those examples
but its of no use for me
If i give you the code of silvaco structures which i have developed (by using your other posts such as 65 nm pmos n all),if you troubleshoot then i will be grateful to you
I am waiting for your prompt reply

thank you

 

[Colbhaidh]

Go ahead and post your TCAD deck, but again, I can only be of limited help

 

[prasad_dhuri]

this code i tried to covert your 65nm pmos code into 65nm nmos code.Kindly check this suggest modifications in this

now the query is i want to simulate the 2 mos devices
1 in which Tio2 as dielectric instead SiO2 and
2.TiO2 as dielectric and instead poly gate i have to use metal gate

both mos devices should be of 50 nm and below

and i have to plot Id vs vgs graph of all three structures
Please suggest the modifications in the code given below
go athena
#
#To allow changing device size, set the gate length as a variable
set Lg=0.015
#
#Set up a mesh suitable for a 65nm MOSFET. The MOSFET will be symmetrical
#so just model half of the device starting mid channel at 0.0.
#Only need to model out to 0.1um so final transistor will be placed in the middle
#of a 0.2um mesh in x direction
line x loc=0 spac=0.01
line x loc=0.5*$Lg spac=0.005
line x loc=0.1 spac=0.1
#
line y loc=0.00 spac=0.005
line y loc=0.3 spac=0.015
line y loc=0.5 spac=0.02
line y loc=2 spac=1
#
# Start off by defining silicon as p type <100> with boron conc=2e15
init orientation=100 c.boron=2e15

#Deposit an oxide on the silicon surface for implanting to prevent channeling
deposit oxide thick=0.05

#nwell formation for the body of the pmos transistor. The shallowest implant
#will define the threshold voltage so vary to get desired threshold.
implant boron dose=2.6E13 energy=420 tilt=5
implant boron dose=1.0E13 energy=50 tilt=5

#Anneal the nwell and electrically activate it
diffus temp=900 time=100 weto2 hcl=3

#Remove all oxide prior to gate oxidation
etch oxide all

#Grow a thin gate oxide target 1.5nm
#Uses rapid thermal oxidation (simplified)
method fermi compress
oxide init=0.0001
diffuse temp=1000 seconds time=26 dryo2
#Display actual gate thickness acheived
extract name="Thin Gate Tox" thickness oxide mat.occno=1 x.val=0

#Deposit 200nm Gate Poly.
deposit poly thick=0.2 division=20

#Dope the poly P-Type
implant phospher dose=1.0e15 energy=15 tilt=5

#Etch the poly gate
etch poly right p1.x= 0.5*$lg

#Deposit Spacer TEOS and etch to form the oxide spacer
deposit oxide thick=0.02 division=8
etch oxide thick=0.02
struct outf=exspacer.str

#P+ Source Drain Implant (PSD). This is a very shallow implant for 65nm
#which is why we had to dope the poly earlier.
implant arsenic dose=1.0e15 energy=3 tilt=0

#Anneal PSD using spike (very fast) RTA
diffusion temp=1000 time=2 seconds f.o2=0.3 f.n2=2.7
struct outfile=expsdrta.str

#Now need to form silicide on the Source Drain and Gate regions.
#130nm and below uses sputtered Cobalt to form CoSi.

#First remove all oxide from surfaces where CoSi is to be formed.
etch oxide thick=0.014

#Sputter 40nm Cobalt
deposit cobalt thick=0.04 div=8

#Use RTA to react Cobalt with Silicon to form CoSi
diffusion temp=550 time=10 second inert

#Strip away any unreacted cobalt from non silicon surfaces
#e.g. the spacer oxide.
etch cobalt all
struct outfile=exsal.str

#mirror the structure to form the complete transistor
structure mirror left
struct outfile=final.str

#Define the electrodes
electrode name=drain x=-0.08
electrode name=source x= 0.08
electrode name=gate x= 0
electrode name=substrate backside

struct outfile=final.str
tonyplot final.str
#################################################################
go devedit
base.mesh height=1000000 width=1000000
bound.cond !apply max.slope=28 max.ratio=300 rnd.unit=0.001 line.straightening=1 align.points when=automatic
imp.refine imp="NetDoping" sensitivity=1
imp.refine min.spacing=0.01
constr.mesh max.angle=90 max.ratio=300 max.height=1 max.width=1 min.height=0.0001 min.width=0.0001
Mesh Mode=MeshBuild
refine mode=both x1=-0.5*$Lg y1=0 x2=0.5*$Lg y2=0.2

######################################
go atlas
# set material models
models cvt srh print
contact name=gate.poly
interface qf=3e10

# get initial solution
solve init


method newton trap
solve prev

# Bias the drain a bit...
solve vdrain=0.05 vstep=0.025 vfinal=0.1 name=drain
log outf=final.log
solve name=gate vgate=0 vfinal=1.0 vstep=0.1
extract name="vt" (xintercept(maxslope(curve(abs(v."gate"),abs(i."drain")))) \
- abs(ave(v."drain"))/2.0)
extract name="beta" slope(maxslope(curve(abs(v."gate"),abs(i."drain")))) * \
(1.0/abs(ave(v."drain")))
extract name="theta" ((max(abs(v."drain")) * $"beta")/max(abs(i."drain"))) - \
(1.0 / (max(abs(v."gate")) - ($"vt")))
tonyplot final.log

please help me to do this