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Gate current, should I use tox or tox_inv?

ljp2706

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I need to understand how much gate current I can expect due to direct tunneling on a FET. I want to reference gate current density plots from online to determine this because the PDK I am working with does not have this information available. Should I look for graphs that have tox that match my device’s physical thickness or should I look for ones that match the electrical thickness at inversion? The two differ by roughly 15%. I am leaning towards being more pessimistic and going with the thinner one, but I am interested in hearing from others.
 

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