Continue to Site

Welcome to EDAboard.com

Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.

gate breakdown voltage

Status
Not open for further replies.

vinodjn

Junior Member level 1
Junior Member level 1
Joined
Jun 15, 2006
Messages
18
Helped
0
Reputation
0
Reaction score
0
Trophy points
1,281
Visit site
Activity points
1,365
for 0.18u technalogy how much gate voltage required for oxide breakdown???

Regards
 

check your technology documentation or just sweep it in simulation until you see the warning message comes up.
 

vinodjn said:
for 0.18u technalogy how much gate voltage required for oxide breakdown???

Regards

Genarally for 1.8V 0.18u tech, the oxide breakdown is about 3V.... Anyway, it is very much depend on the process that you are using
 

szekit, as my experience, simulation can't give the answer of gate oxide breakdown volt. So, check the fab's EC table to find the maximun rating.

For .18 process, 2.5 to 3 volts will be danger.
 

for 0.18u technalogy how much gate voltage required for oxide breakdown???
u may see the process specification document, and the gate oxide breakdown voltage is specified in the document. This document should be supported by ur foundry.
 

Oxide voltage breakdown is about 0.8 ... 1.0 V / nm.
Oxide thickness is about 3 nm for 0.18 um technology.
So 3 nm * ( 0.8 ... 1.0 ) V / nm = 2.4 ... 3.0 V .
 
what happen if there's transient spike (~10us) of 3 to 4V on the 0.18um devices during power up and power down? does it pose any dangerous?
 

Status
Not open for further replies.

Similar threads

Part and Inventory Search

Welcome to EDABoard.com

Sponsor

Back
Top