GaN RF Switch

[ge]

I’ve done a few diode high power and/or low loss switches using MaCom & Alpha/Skyworks over the years and was caught a bit surprised when I found Tagoretech making GaN RF switches.
Diode design will always be faster.
In general, is there any other trade offs using a GaN Fet switch (noise, distortion, etc)?

Thanks,
GE

 

[hanif]

Disadvantages of GaN
Manufacturing complexity and cost
Material defects and reliability concerns
Integration into existing semiconductor processes
Limited availability of GaN substrates

One downside of GaN is there is no 300 mm GaN wafers. GaN wafers are usually comes in 150–200 mm sizes - it makes them unattractive for ULSI.
Semiconductor industry is driven by economics. This is why all major companies are producing their products on 300 mm wafers because this way more dice (chips) produce on the same wafer.
GaN is superior to Si in mobility allowing faster transistors but inferior in mechanical and thermal properties.

check these links for more info

GaN Advantages and Disadvantages

Discover GaN advantages and disadvantages in electronics with their high-speed operations, improved thermal management, and energy efficiency.

resources.pcb.cadence.com

Are there any disadvantages of GaN over Silicon? As far as I know, GaN is quite better in performance as well as is becoming very cost fr...

Answer (1 of 3): Without getting into too much details the main downside of GaN is there is no 300 mm GaN wafers. Semiconductor industry is - as any other - is driven by economics. This is why all major companies are producing their products on 300 mm wafers while hoping for 450 mm to happen wit...

www.quora.com

What You Need to Know About GaN and SiC FETs

New FETs on the block. What you need to know about high electron mobility transistors (HEMT) silicon carbide (SiC) and gallium nitride (GaN).

resources.altium.com

 

[dick_freebird]

One downside of GaN is there is no 300 mm GaN wafers. GaN wafers are usually comes in 150–200 mm sizes - it makes them unattractive for ULSI.

With only a N-type, ULSI is not in the picture. GaN
vendors manage to integrate the gate driver. Memory
and low power logic, you cannot have in today's GaN
technology space. Analog, got plenty of figuring out
to do, probably taking cues from what's been doable
in GaAs for support circuitry (pain and accomplishment)
and from earlier NPN-only technologies' design styles
and addressable problems vs not-.

Now one of my notional technology developments
is a path to co-processed CMOS and dGaN (or eGaN)
on a single insulating substrate. If you're up for fun
and have a couple of million to throw, at a do-all
PMIC, VLSI digital, LSI mixed signal and lower cell
bands RF, for extremes of temperature (77K to 300C)
and radiation (do not ask, in an "international forum")
be sure and get in touch.