JStuffer
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switching frequency of igbt
Hello, i'm designing a frequency converter and have some questions on it's H-bridge part. It's going to be 1-phase 230V converter, PWMed sine wave with output frequency between 0 to say 500Hz, modulation frequency about 100kHz. The high-rail potential turns out to be 325V. The power rating is not yet determined.
Now, i'm planning to make the high-side semiconductors switch only at the low output frequency and the low-side ones do additionaly the pulse-width modulation. I'm going to use IRG4PC40W which is fast (max. 150kHz hard switching) IGBT for the low-side and slower & weaker IRG4BC20U (max. 40kHz (!)) for the high side.
I wonder if you can help me answer some questions:
1) When the low-side IGBT switches at such a high frequency and the corresponding high-side one is held conducting, will it's slower switching capability impact the fast currents or will it just pass-through as it's meant to?
2) Is the desired modulation frequency of 100kHz a reasonable value?
3) When the sine wave signal for the PWM reaches it's peak and the IGBTs are possibly held conducting continuously for some while won't they go aflame at moderate loads? I'm not sure how an IGBT operates - the datasheets provide only a pretty wide turn-off SOA.
4) Could you foreshadow the final product's power rating or it's limiting factors? Like something i should bear in mind, bottlenecks and stuff? The IGBT's are rated at 600V, 13A for high-side, 40A for low-side (current rating halved at high temps).
5) Or should i stop tempting fate and buy (aaargh $$$) additional two of the faster and tougher IGBTs?
I'm attaching an image of the h-bridge if my descriptions were any cloudy or something . Protection diodes, filters and stuff will go to their appropriate places.
Thanks for your time.
John
Edit: fixed a typo and a device's name
Hello, i'm designing a frequency converter and have some questions on it's H-bridge part. It's going to be 1-phase 230V converter, PWMed sine wave with output frequency between 0 to say 500Hz, modulation frequency about 100kHz. The high-rail potential turns out to be 325V. The power rating is not yet determined.
Now, i'm planning to make the high-side semiconductors switch only at the low output frequency and the low-side ones do additionaly the pulse-width modulation. I'm going to use IRG4PC40W which is fast (max. 150kHz hard switching) IGBT for the low-side and slower & weaker IRG4BC20U (max. 40kHz (!)) for the high side.
I wonder if you can help me answer some questions:
1) When the low-side IGBT switches at such a high frequency and the corresponding high-side one is held conducting, will it's slower switching capability impact the fast currents or will it just pass-through as it's meant to?
2) Is the desired modulation frequency of 100kHz a reasonable value?
3) When the sine wave signal for the PWM reaches it's peak and the IGBTs are possibly held conducting continuously for some while won't they go aflame at moderate loads? I'm not sure how an IGBT operates - the datasheets provide only a pretty wide turn-off SOA.
4) Could you foreshadow the final product's power rating or it's limiting factors? Like something i should bear in mind, bottlenecks and stuff? The IGBT's are rated at 600V, 13A for high-side, 40A for low-side (current rating halved at high temps).
5) Or should i stop tempting fate and buy (aaargh $$$) additional two of the faster and tougher IGBTs?
I'm attaching an image of the h-bridge if my descriptions were any cloudy or something . Protection diodes, filters and stuff will go to their appropriate places.
Thanks for your time.
John
Edit: fixed a typo and a device's name