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Failure Analysis on gate-oxide trapped charge in MOSFET

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scottieman

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A N-channel MOSFET is characterized, and is found the threshold voltage is smaller than the specification.

Then the N-channel MOSFET is baked at 150C for 12hr. After that, the threshold voltage of that N-channel MOSFET is within the specification!!!!!

From the above result, I suspect that positive charge are being trapped at the gate-oxide initially. After the baking, the positive charge are eliminated in some way.

The question I have is: This positive trapped charge should be HOLE or Mobile ion (e.g. sodium, Potassium).

Thanks
Scottie
 

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