Temperature causes electrons to be promoted to the conduction band and from donor levels, or holes to acceptor levels. The dependence of conductivity on temperature is like other thermally activated processes:
s = A exp(–Eg/2kT)
where A is a constant (the mobility varies much more slowly with temperature). Plotting ln s vs. 1/T produces a straight line of slope Eg/2k from which the band gap energy can be determined. Extrinsic semiconductors have, in addition to this dependence, one due to the thermal promotion of electrons from donor levels or holes from acceptor levels. The dependence on temperature is also exponential but it eventually saturates at high temperatures where all the donors are emptied or all the acceptors are filled.
This means that at low temperatures, extrinsic semiconductors have larger conductivity than intrinsic semiconductors. At high temperatures, both the impurity levels and valence electrons are ionized, but since the impurities are very low in number and they are exhausted, eventually the behavior is dominated by the intrinsic type of conductivity i.e. transition from valance band to conduction band.