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I wonder why any reference does not define the OEM as not all IGBT's or HV power BJT's behave the same.

Although we can expect terms that relate to the Q of each junction or in terms of Rce(sat), C(0V) with the inductance effects of a very low C junction with ultrafast "snappy" diodes that Infineon defines by the crest shape of how soft the recovery is.

I imagine there are different levels of the model with assumptions of the diode model for saturation current and emission coefficient, for the C-B or B-E junction.

The most common  model I could find was;[ATTACH=full]198764[/ATTACH]

Other sources

[URL unfurl="true"]https://www.eeweb.com/reverse-recovery-charge-current-and-time/[/URL]

[ATTACH=full]198765[/ATTACH]

How does this work for junction temp? in 'C or 'K 

I recall seeing log (Tj) at one time which works for 'K , so negative 'C numbers don't work either way.

Did you find any correlation with datasheets in the article?