emergancy need on tripple well model of 0.18 um technology

Status
Not open for further replies.
A

amny

Newbie level 4
Joined
Jul 24, 2013
Messages
7
Helped
3
Reputation
6
Reaction score
3
Trophy points
3
Visit site
Activity points
51
Hi every one
I really need the transistor model of an NMOS in 0.18 um triple well technology for simulation of circuits in hspice. It is due to my M. S. project and I have little time up to my defence session. I have some simulation results in 0.18 um TSMC mixed mode technology, but they are with typical NMOS of this technology. The guidelines to change the transistor models of a typical NMOS to triple well type can help me too.
Thank you for your help.
 

amny said:
The guidelines to change the transistor models of a typical NMOS to triple well type can help me too.
Click to expand...

I'd think it's enough to change the channel doping concentration NCH to the doping concentration of the p-well (≈ 3.2e+017).
 
Reactions: amny

    A

    amny

    Points: 2
    Helpful Answer Positive Rating
erikl said:
I'd think it's enough to change the channel doping concentration NCH to the doping concentration of the p-well (≈ 3.2e+017).
Click to expand...
tanks for your answer. but can you introduce me a reference on it. I should defend my assertion in my defence session.

- - - Updated - - -

erikl said:
I'd think it's enough to change the channel doping concentration NCH to the doping concentration of the p-well (≈ 3.2e+017).
Click to expand...
tanks for your answer. but can you introduce me a reference on it. I should defend my assertion in my defence session.
 

amny said:
... can you introduce me a reference on it.
Click to expand...

Unfortunately not. But I think changing NCH is enough, because there are no other physical differences. At least I didn't find any other differences in our model files (from a few years ago), not even in VTH.

SPICE/SPECTRE should calculate the different channel conductance and the corresponding capacitances correctly with the new NCH value. You could try and compare their values.
 
Reactions: amny

    A

    amny

    Points: 2
    Helpful Answer Positive Rating
thanks again erikl. Can you tell me about the range of typical NMOS's NCH in 0.18 um technology? The NCH of NMOS transistor in my technology file is 3.9E+17. Is this difference in NCH value of triple well an typical NMOS (3.2E+17 and 3.9E+17), regular?
 

amny said:
Is this difference in NCH value of triple well an typical NMOS (3.2E+17 and 3.9E+17), regular?
Click to expand...

No, I don't think so. Our process used an EPI p-stubstrate with NCH=5.22E+16 . The triple well p implant concentration usually is higher.

For non-EPI processes s. e.g. these SPICE data from TSMC/MOSIS.
 
Reactions: amny

    A

    amny

    Points: 2
    Helpful Answer Positive Rating
amny said:
... in the mosis test data EPI and non-EPI processes have the same NCH!
Click to expand...

To achieve the same doping concentration for EPI and non-EPI substrates means the wafer provider can adjust his processes quite well.

Or the extractor (or MOSIS) guys just took over the values ...

So what? Don't mind -- or ask the MOSIS guys!
 
Reactions: amny

    A

    amny

    Points: 2
    Helpful Answer Positive Rating
Status
Not open for further replies.

Similar threads

Menu
Log in
Register
Cookies are required to use this site. You must accept them to continue using the site. Learn more…