electron and hole mobility on mechanical stress

Status
Not open for further replies.
R

raj_007

Newbie level 4
Joined
Mar 1, 2013
Messages
5
Helped
0
Reputation
0
Reaction score
0
Trophy points
1,281
Visit site
Activity points
1,314
Hi,

shallow trench isolation (STI) that cause the LOD effect, it increase the pmos driving strength and lower the nmos driving strength.

Please can anyone share the link related to above statement I am not getting cleared idea how it exactly.

Thanks
 

I know this STI stress generated effect as WPE, see e.g. this posting, especially the linked paper named WPE_LOD_Paper.pdf, sect. III. STI Stress, Fig. 17 on page 6 .
 
Status
Not open for further replies.

Similar threads

Menu
Log in
Register
Cookies are required to use this site. You must accept them to continue using the site. Learn more…