You're not killing the transistor gain per se, you are increasing
the amount of current required to initiate & sustain the SCR
conduction. The parasitic devices themselves are not altered
unless you are changing dopings or spacings (lateral BJT base
width).
yeah, it means doping has been increased to reduce the resistances, say n-well doping has been increased, it means beta of pnp vertical transistor has been reduced,coz Ic is reduced. isn't t?
IT will certainly give latcup immunity by increasing the recombinations of electrons in well region.. reducing beta of PNP transistor.. But at the same time PMOS threshold will be increased.. .. You can use eipitaxial layer along wiht highly doped P substrate as alternative..
No. As Dick Freebird stated above: "You're not killing the transistor gain per se, you are increasing the amount of current required to initiate & sustain the SCR conduction." See the extract from Rincón-Mora's CMOS Technology course below.