when an intinsic semiconductor is doped.......the no of holes/electrons increase....but the material is still neutral.....is it because of the ions formed( donors becoming + bcos they lose e and acceptors - bcos they accept an electron??)....
when a donor loses an electron is a hole formed or only a immoblie ion???
also with usual notations....y is n.p = n_i^2......is i bcos of the fermi dirac distribuiton??
when an intinsic semiconductor is doped.......the no of holes/electrons increase....but the material is still neutral.....is it because of the ions formed( donors becoming + bcos they lose e and acceptors - bcos they accept an electron??)....
when ion looses electron(ie the donor ion looses electron) holes are not formed.Holes are formed only when elctrons in the semiconductor lattice are removed(either by acceptors or driven by a field).
when ion looses electron(ie the donor ion looses electron) holes are not formed.Holes are formed only when elctrons in the semiconductor lattice are removed(either by acceptors or driven by a field).