Do n+ / p+ diffusion resistors exhibit flicker noise?

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Really. While I have found many articles documenting flicker noise in poly resistors, I havent seen so many for flicker noise in diffusion resistors.

Why is this? Is it that flicker noise in diffusion resistors is perhaps not that big a component of the overall noise or something?

Thanks,
 

diarmuid said:
Is it that flicker noise in diffusion resistors is perhaps not that big a component of the overall noise or something?
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Flicker noise emerges from interferences of current flow at any boundary interfaces (worst in MOS channels). Diffusion resistors show more interface area (actually the whole reverse-biased silicon junction around it) than poly resistors, so I'd expect they'd exhibit relatively more flicker noise than the latter ones - although I have no docu to prove my opinion.

A G00GLE search on flicker noise of diffused resistors indeed reveals some - more or less - theoretical papers on that - amongst others a nice overview on 1/f noise, but I didn't find anything concrete to differentiate between poly and diffused resistors. Also, the foundry docs don't give corresponding values, unfortunately.
 
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Thanks Erikl for that. Interesting the lack of work done on 1/f noise for diffusion resistors. Certainly be a topic well worth researching.
 

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