You are also new to realistic component models.
ALL PARTS HAVE RLC VALUES.
What would you expect to happen if the real 1N4004 has about 100 pF near 0V and 15 pF max (10 pF typ) @ -4V during the insulation state?
What would you expect if the pad pitch was 2 cm and were told it was about 5 to 10 nH/cm during the conductor state including traces?
100 pF is almost 1 Ohm at 1GHz
10 nH is a little over 50 Ohms at 1GHz
With only 1k Load and no cap with some ESR, it looks more like a 50 ohm reactance bridge with the diodes bypassed with a 1 Ohm cap.
You will see that silicon diode Rs is inverse with max case power rating and inverse with junction capacitance too when you look closely at datasheets or examine in a spreadsheet and that parasitic inductance is predictable for a known log(length/width) ratio and trace capacitance is a ratio of area to gap for some dielectric on each side.
Consider every schematic as a "logic diagram" and not an analog diagram until you learn the parasitics of all parts. ESR, ESL, Rp, Rs, Cp.
Also there are no ideal voltage sources they all have an Rs and RF prefers a std. 50 Ohms for MPT.
Also no capacitors or batteries are ideal, so learn to include the analog values like ESR in SMPS schematics and Rs for inductors and for 10850 batteries 10kF + 50mohm for a good Li ion cell with some pre-charge voltage like 3.7 but even that neglects the memory effects charged during CV. Like all double-layer electrolytics and other caps to some extent, a certain % of voltage returns after very brief short circuit.
Welcome to the real world.
By the way can you guess the self resonant frequency of the obsolete 1N4004?
Next time you get a spectrum analyzer try a small signal SRF test.