Can anybody tell me the main difference between n-well, dual well and triple well process. I am not able to find and proper figure which can show the n-well and p-well in all these processes
n-well : NMOS formed by n+ on substrate. PMOS formed by p+ on n-well, which sits on the substrate.
double well : NMOS formed by n+ on p-well, which sits on the substrate. PMOS formed by p+ on n-well, which sits on the substrate.
triple well : NMOS formed by n+ on p-well, which sits inside a n-well, which further sits on the substrate. PMOS formed by p+ on n-well, which sits on the substrate.