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In MOS the Gate resistances is a few Giga ohms where as there is a layer of pure insulator in the gate of IGBT raising the resistance to over few Tera ohms
An insulated-gate field-effect transistor or IGFET is a related term almost synonymous with MOSFET. The term may be more inclusive, since many "MOSFETs" use a gate that is not metal, and a gate insulator that is not oxide. Another synonym is MISFET for metal–insulator–semiconductor FET.
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The insulated-gate bipolar transistor or IGBT is a three-terminal power semiconductor device primarily used as an electronic switch and in newer devices is noted for combining high efficiency and fast switching. It switches electric power in many modern appliances: electric cars, trains, variable speed refrigerators, air-conditioners and even stereo systems with switching amplifiers. Since it is designed to turn on and off rapidly, amplifiers that use it often synthesize complex waveforms with pulse width modulation and low-pass filters. In switching applications modern devices boast pulse repetition rates well into the ultrasonic range—frequencies which are at least ten times the highest audio frequency handled by the device when used as an analog audio amplifier.
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