FinFETs possess the following key advantages over bulk MOSFETs: reduced leakage,excellent subthreshold slope,
and better voltage gain without degradation of noise or linearity. This makes them attractive for digital and low-frequency RF applications around 5 GHz, wherethe performance-power tradeoff is important. On the other hand,in high-frequency applications, planar bulk MOSFETs are seento hold the advantage over FinFETs due to their higher peak transconductance. However, this comes at a cost of a reducedvoltage gain of bulk MOSFETs.