Design of PMOSFET using ATLAS with specified specifiaction as per the attachmetns

[STAR DELIGHT]

Problem is-->this device is showing output for +ve voltage and error for -ve voltage.
Where desire result is just reverse.
Hence kindly check the code and anyone reply me. I am unable to fix the problem.

go atlas
TITLE Strained_MOSFET device simulation
mesh space.mult=1.0
#
x.mesh loc=0.000 spac=0.05
x.mesh loc=0.020 spac=0.001
x.mesh loc=0.100 spac=0.0005
x.mesh loc=0.120 spac=0.001

#
y.mesh loc=-0.013 spac=0.03
y.mesh loc=0.000 spac=0.0005
y.mesh loc=0.015 spac=0.001
y.mesh loc=0.060 spac=0.05
y.mesh loc=0.070 spac=0.05
y.mesh loc=0.770 spac=0.25
y.mesh loc=2.270 spac=0.4
y.mesh loc=4.270 spac=0.8

#
region num=1 y.max=0.000 x.min=0.020 x.max=0.100 oxide
region num=2 x.min=0.000 x.max=0.020 y.min=0.000 y.max=0.070 silicon
region num=3 x.min=0.100 x.max=0.120 y.min=0.000 y.max=0.070 silicon
region num=4 x.min=0.020 x.max=0.100 y.min=0.000 y.max=0.015 silicon
region num=5 x.min=0.020 x.max=0.100 y.min=0.020 y.max=0.060 SiGe x.comp=0.04
region num=6 x.min=0.020 x.max=0.100 y.min=0.060 y.max=0.070 SiGe
region num=7 y.min=0.070 y.max=0.770 SiGe x.comp=0.05
region num=8 y.min=0.770 y.max=2.270 SiGe x.comp=0.05
region num=9 y.min=2.270 Silicon
region num=10 y.max=0.020 x.max=0.020 air
region num=11 y.max=0.020 x.min=0.100 x.max=0.120 air

#


# #1-GATE #2-SOURCE #3-DRAIN #8-SUBSTRATE(below oxide)

#

elec num=1 name=source x.min=0.000 x.max=0.020 y.min=0.000 y.max=0.000
elec num=2 name=gate x.min=0.020 x.max=0.100 y.min=-0.013 y.max=-0.013
elec num=3 name=drain x.min=0.100 x.max=0.120 y.min=0.00 y.max=0.000
elec num=4 name=substrate x.min=0.000 x.max=0.120 y.min=4.270 y.max=4.270


#
ELIMINATE COLUMNS y.min=0.060
ELIMINATE ROWS x.min=0.020 x.max=0.100 y.min=0.060


#
#*********** define the doping concentrations *****

doping uniform conc=1e20 p.type reg=2
doping uniform conc=1e20 p.type reg=3
doping uniform conc=1e17 n.type reg=4
doping uniform conc=1e18 n.type reg=9



save outf=Strained_MOSFET.str
tonyplot Strained_MOSFET.str



#
contact name=gate n.poly
contact name=source aluminum
contact name=drain aluminum
contact name=substrate aluminum

# set material models
models cvt srh print


interface qf=5e10

method newton
solve init

# Bias the drain
solve vdrain=0.1

# Ramp the gate
log outf=Strained_MOSFET_1.log master
solve vgate=0 vstep=1 vfinal=5.0 name=gate
save outf=Strained_MOSFET_1.str

# plot results
tonyplot Strained_MOSFET_1.log


# set gate biases with Vds=0.0
solve init
solve vgate=1 outf=solve_tmp1
solve vgate=2 outf=solve_tmp2
solve vgate=3 outf=solve_tmp3
solve vgate=4 outf=solve_tmp4


#load in temporary files and ramp Vds
load infile=solve_tmp1
log outf=Strained_MOSFET_2.log
solve name=drain vdrain=0 vfinal=5 vstep=1

load infile=solve_tmp2
log outf=Strained_MOSFET_3.log
solve name=drain vdrain=0 vfinal=5 vstep=1

load infile=solve_tmp3
log outf=Strained_MOSFET_4.log
solve name=drain vdrain=0 vfinal=5 vstep=1

load infile=solve_tmp4
log outf=Strained_MOSFET_5.log
solve name=drain vdrain=0 vfinal=5 vstep=1

tonyplot -overlay Strained_MOSFET_2.log Strained_MOSFET_3.log Strained_MOSFET_4.log Strained_MOSFET_5.log


quit

View attachment abc.pdfView attachment 8.00499251.pdf