MSH
Member level 2
This report describes the design of a two-stage broadband low-noise-amplifier (LNA) for the frequency range from 3 GHz to 9 GHz, using GaAs MESFETs with an ft of 20 GHz. The passive components were implemented with microstrips. In the frequency band of operation, the achieved noise figure (NF) is within 0. 5 dB from the minimum NF of a single transistor, the power gain is 15 dB, flat within 1 dB, and the maximum input VSWR is lower than 3.
