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DEFINING SiGe MOLE FRACTION IN A n-CHANNEL MOSFET IN SENTAURUS TCAD

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Rupam Goswami

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Hello,
I am new to Sentaurus TCAD and am facing a problem regarding defining mole fraction in SDE. I have a few questions regarding the mole fraction definition in the channel of my SiGe MOSFET.

1. Should I define mole fraction in SDE using the following commands wherever appropriate?

(define x_SiGe 0.5)
(sdedr:define-constant-profile "CP.xMole" "xMoleFraction" x_SiGe)
(sdedr:define-constant-profile-material "CP.xMole" "CP.xMole" "SiGe" 0 "Replace")


2. Or is it sufficient to define the mole fraction only in the Physics (Material) section of the file in SDEVICE?
My device has successfully run for both the methods with a slight change in on current and zero change in off current.
3. Does it mean that I can use any one of the program of SDE?


Thank you.
 

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