hari_preetha
Full Member level 2
I want to design Ka- Band Power Amplifier using ADS software. I have taken 0.15 um GaN HEMT transistor for my design. According to datasheet, biasing conditions are VDS = 28 V and IDS = 100 mA. But when we checked DC IV Characteristics, I am getting operating point at VDS = 16 V, IDS =0.072 A, and VGS =-0.080 V in the active region. Once I select VDS =28 V, IDS =100 mA , am closer to Cutoff region.
I am getting confused by these two version, whether I have to follow datasheet biasing values or plotted DC IV characteristics values. Which I have to follow, clarify someone.
I am getting confused by these two version, whether I have to follow datasheet biasing values or plotted DC IV characteristics values. Which I have to follow, clarify someone.