Hi folks,
CONT (contact) is a via for M1 to Poly connections. And CONT is also the via to connect to Deep-Nwell or PIMP layers. There exists a SiO2 layer exist underneath the poly, correct? Thus CONT for Poly must be shorter than the CONT to connect to the a Deep NWELL underneath? When I look at of CMOS cross sections, it's hard to distinguish.
In the layout software, CONT is CONT but I always wonder that the height for CONT for poly must be different than the one used to connect to the substrate. If you can explain or point me to a cross sectional view somewhere on the web specifically addressing CONT layer, I'd greatly appreciate it.
Thanks,