It is a linear regulator, so Ohm's Law prevails. 5V* 0.75A= 15/4 W =3.75 So Power will be dissipated according to the shared current *V.KlausST. can you please let me know why the voltage across the mosfet is 1.12V and not 0.25 as per the datasheet.
How did you make it that the volt across Mosfet would be 1V
For high side current sensing, i have to use P Channel mosfet...??It is a linear regulator, so Ohm's Law prevails. 5V* 0.75A= 15/4 W =3.75 So Power will be dissipated according to the shared current *V.
If you had a lower Vcc supply then you will have a lower drop.
Always choose twice the power rating than will be used.
If you want the temp rise to be 50% of the 125'C rated temperature and increase R to drop Vds=0.25V and the remainder shared by Vf & Rs
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This is another poor linear design because it does not sense current or thermal effects but it has an LED with Vf just slightly less than the supply.
View attachment 188802
You can sense with a very small R value then amplify it and regulate current.
View attachment 188803
But realistically there are far better designs in IC's for LED drivers so these become learning aids to how not to design a high power LED driver.
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This is one way to salvage your design is to raise the reference voltage for Vb by raising Ve with Ie*Re.
View attachment 188805
You can lower Vds even more , but is not necessary. But if you had to say you had a std FET with Vt=3V then you can still use an NFET move the current sense to the high side. Moving the source to ground thus raises Vgs/Vgs(th) ratio which lowers RdsOn but now you lose your NPN Vbe reference.
Moving the current sense to the high side now inverts your logic. Now a lower voltage indicates rising current, so the current-limit for the gate cutoff driver would have to change.
Not 0.25V but 0.025V !!!KlausST. can you please let me know why the voltage across the mosfet is 1.12V and not 0.25 as per the datasheet.
How did you make it that the volt across Mosfet would be 1V
Excatly Got you point.Not 0.25V but 0.025V !!!
You have an input voltage of 5V.
So the total voltage across each part in series needs to be 5V. (There is no way around this, in every circuit)
Diodes: lets say 0.35V
LEDS: 2.9V
Transisitor: rest
Resistors: 0.6V
Transistor: 5V - ( 0.35V + 2.9V + 0.6V) = 5V - 3.85V = 1.15V.
Your circuit is designed for the transistor to regulate. Regulate = adjusting the voltage ... in a way that above equation is true.
Klaus
ok, so whatever circuit i use, have to face the heating problem as well.Hi,
I´m not sure you understood.
* I did not suggest high side sensing
* I said this (sum of all voltages = 5V) is true for every circuit, thus also for high side sensing
So high side sensing will not reduce overall power dissipation. You gain nothing in this regard.
Klaus
So to reduce the dissipated heat you only have these options:
* reduce V_in
* increase V_Led (maybe by using two or more in series)
* reduce the LED current
* .... or use switch mode circuit instead of linear circuit
Show layout in photo and exact parts list for each with values for R1,R2,R3 for ohms and R3 must be rated for >= 2W along with datasheet for FET and LED.For high side current sensing, i have to use P Channel mosfet...??
and even i have tried circuit you sent with alteration. add 1.5K resistor to Transistor E and GND. but the problem is the same. Voltage across the mosfet is 1V
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