No ! My mean was in parallel . ([] means in parallel !)
And re=Vt/Ic or IE and vt is thermal coefficient and will given by 11600/Temp ( at kelvin ) and for 27 degree (room degree ) it will be about 26 mv
And you bypassed all of your emitter resistor , thus you'll have Ri=R1 in parallel R2 in parallel beta*(re).
Good luck
Goldsmith
Sorry, Goldsmith - it isn`t correct.
Input resistance:
Zin=R1||R2||h11 with h11=small signal input resistance of the BJT in CE configuration.
(This formula assumes that the emitter resistor Re is bypassed by Ce for all frequencies of interest)
Output resistance:
Zout=Rc||(1/h22) with Rc=collector resistor and h22=output conductance of the BJT (normally, can be neglected against Rc).
________________
Qube, your formulas for the edge frequencies are OK - again under the assumption that Ce sufficiently bypasses Re for the operating frequency.
Yes , but i told them with some usual approximations . .......
Goldsmith - your main error was the part
beta(re+RE) .
The input resistance at the base node of a BJT with Re-feedback is (re + h21*RE) (in your terms: re + beta*RE).
---------- Post added at 16:43 ---------- Previous post was at 16:38 ----------
_____________________________
The capacitor will attenuate signals frequencies higher than the F value??
For example ,the F value is 100Hz..
so the Cin capacitor will attenuate(reduces the amplitude) input signal whose frequency is higher than 100Hz....Am i right???
Qube, the input coupling capacitor - together with the amplifier input resistance - forms a C-R highpass.
That means that for frequencies well below the corner frequency the signal will be attenuated.
Well above this frequency the signal is passsed to the transistor input (nearly) without any loss.
Its just my simple doubt that in the formula Cin=1/(2*pi x F x Zin) ,the F is the value of the frequency,my doubt will the CR filter attenuate signal above the F value or below the F value in the formula Cin=1/(2*pi x F x Zin)
And i read in a book about calculating the input impedance
it says
1/Rin=1/R1+1/R2+1/Rin(base),ac
Rin(base),ac=hfe(Re*Rload/Re+Rload)
so regarding that schematic
Rin(base),ac=18.5
1/Rin=1/20K+1/3.6K+1/18.5K
Sorry,high pass filter passes frequencies higher than the F value in Cin=1/(2*pi x F x Zin)... it attenuates frequencies lower than F...Qube, do you know the difference between lowpass and highpass?
Think about the meaning of the term "high paass".
Qube, do you know the difference between lowpass and highpass?
Think about the meaning of the term "high paass".
The given expression for Rin(base) is not correct.
Apparently it applies to the emittter follower (common collector) because of Re||Rload.
More than that it neglects the term h11 - which may be allowed in case of the emitter follower only!
But in your case, Re is bypassed by Ce. Thus, don`t apply the wrong formula.
Qube,
The best way to find the input and output impedance is to use the General Immittance Theorem. This theorem states that the input impedance can be obtained from the denominator of the transfer function by setting solving for -Zs. Similiarly, the output impedance can be obtained by solving for -ZL. Don't forget that the source impedance affects the output impedance and the load impedance affects input impedance. Since you did not specify finite values for beta, C1, C2, and CE, the transfer equation will contain a lot of terms. After finding the input and output impedances, I simplified them by removing the capacitors and setting the load impedance to infinity and the source impedance to zero.
Ratch
Your Beta for specific transistor becomes constant with varying Ib and Ic, If BJT is working in Forward-active region or inverse-active region. Yes Beta (hfe) value changes significantly once it cross, cutoff or saturation.and about beta . you can't say that beta is about 100 simply , because the specifications of each transistor is different from another type and the beta , depends on the quiescent point
Hi Qube,
I think your calculation is correct. I have found no errors.
Dear FvMHere's a typical curve for BC847. Changes due to temperatur and type variations have to be added.
Almost constant B respectively β can be only expected for an individual transistor in a restricted Ic and temperature range. But you can't base a design on a particular B value.
We use cookies and similar technologies for the following purposes:
Do you accept cookies and these technologies?
We use cookies and similar technologies for the following purposes:
Do you accept cookies and these technologies?