You'd have to drill into the foundry modeling group
to ask what the characterization material, that the
mismatch models are extracted from, looked like. In
my experience match data was taken from matching
structures that had identical, adjacent, but not
interleaved (as CC would) resistors, MOS, BJT devices.
So there could be further improvement by CC if the
matching stats are for non-CC style layouts. And the
improvement to things like temperature gradient
effects (never an issue with simple low current
individual device value measurements) of course is
there (and likely unmodeled entirely, thermal effects
capability seems kind of recent in simulators and
PDKs always lag behind that).