Hi mike_bihan,
recently i had the question of how to calculate the channel length modulation for a given technology. well, since i am using 0.5um tech, the bsim3v3.2 gives PCLM as the model parameter. but it involves a little complex equation. so i exeuted my test transistor alone in spice and sw the I-V curve for expected VGS and ramp VDS from vss to vdd. this can be obtained in hardcopy and get approximate lambda or (this is what i did) go and check the analog circuit design forum and look for channel length modulation: spice problem. may be this would help you.
srivatsa
channal lenth modulation occur due to lateral elecric field in device gettign stronger and important as channel leth reduces and so lambda is correction factor for the assumption about L considered in physics of device.
so i suppose the relation derived for lambda and ids remain valid in shot channel only and not when L=Leff.
Lambda which is defined for the saturation current is defined taking an approximation.
Leff = L - dL
1/Leff ~ (1+dL/L) / L
and dL/L is defined as Lambda*Vds an approximate model
So the approximation is true only of dL/L << 1
Also Rout = 1/(Lambda *I )
is also an approximate expression
Rout = (1+Lambda*Vds) / (Lambda * I)
This is true when the Lambda approximation holds, so I don't think you should compare these results to accurate plots from a simulator since Lambda is just a parameter useful to model Channel Lendth modulation for hand calculations, it does not even appear as a separate parameter in the BSIM3 model.
This is interesting. I think the hand calculations should give u a result that is reasonable approximation to the simulated output, i think about 10%. Could you give a circuit example for this I think that would be helpful.