Hi,
I am trying to implement a Modified FinFET SRAM Array which implements both independent and shorted gate models and I hope to implement it in 16nm node. Since 16 nm FinFET double Gate model is not directly available from PTM Models, I would like to modify the existing 32nm DG FinFET models using the model controllers and parameters availiable from the 16nm MG gate model(which is the Finfet structure with single gate connection, As am employing a mixed structure of both the independent and shorted gate mode I need the 16nm DG Finfet structure).
I would like to know whether swapping and changing the parameters like igcmod(=0 for DG and =1 for triple gate) , rgatemod(0 for 32nm DG and 2 for 16nm) etc etc , ie , changing the general parameters in the 16nm FinFET and 32nm DG FinFET will give me a 16nm DG FinFET Model?????