I have designed the bias circuit shown in the picture. M1 and M2 are deeply in saturation, M3 and M4 are in weak inversion.
I know that, I can mirror Ibias from node VBP where PMOS tranzistors are in saturation.
My question is following: Is it possible to mirror Ibias from node VBN where NMOS tranzistors are in weak inversion.
Vnb will be very sensitive to voltage variation on the source side of current mirror. Any difference in the source of current mirror between the 2 will give high mismatch for the current due to devices being in sub-threshold.