tyanata
Full Member level 2
I have designed the bias circuit shown in the picture. M1 and M2 are deeply in saturation, M3 and M4 are in weak inversion.
I know that, I can mirror Ibias from node VBP where PMOS tranzistors are in saturation.
My question is following: Is it possible to mirror Ibias from node VBN where NMOS tranzistors are in weak inversion.
I know that, I can mirror Ibias from node VBP where PMOS tranzistors are in saturation.
My question is following: Is it possible to mirror Ibias from node VBN where NMOS tranzistors are in weak inversion.