Hi,
I need do the nosie analysis for my 0.5um CMOS design.But I doubt the accuracy of my noise model.Pls. see below:
NMOS Tr
+kf= 1.40056062662658E-29
+af= 0.559711233377457
PMOS Tr
+Kf= 5.73806435585742E-26
+Af= 1.95774745941162
Communicated with our foundry, they can not support it. So, would u pls. share with me your noise model for reference?
Per my understanding, the PMOS Tr have better flicker noise characteristics than NMOS Tr. But the above model obviously oppose it.
Another question is if the advanced process(with shorter chanel lenghth) have better or less noise characteristics than the older process(with longer channle lenghth) in normal?
Thanks in advance