aye, interesting.. and even more interesting is to think .. the resistor does not get a say in the equation but it takes practically ALL of the power dissipation! ha.
those pulse rating curves i understood them to be single pulse event with sufficient cool down period after.. while in a gate driver application it is continuous pulsing. so i thought those curves could not be used to determine resistor survivability. am i wrong?
those pulse rating curves i understood them to be single pulse event with sufficient cool down period after.. while in a gate driver application it is continuous pulsing. so i thought those curves could not be used to determine resistor survivability. am i wrong?
Both curves are for continuous pulsing, there are additional single pulse charts in the respective (Vishay) datasheets. The shown curves are missing a duty cycle specification, but for the small duty cyles under discussion they should fit anyway.
Hi deepakchikan
It is simple .
You know about Tr of your mosfet . ( rise time ) ( by datasheet )
Vc=1/C integral over ic dt ====> from zero up to tr ====> Vc=tr*ic/c ===> ic = Vc*c/tr for usual mosfets VGS=15 it will be turned on . so Vc=15 then required ic = 15*ciss/tr and of course it is inrush current . so required power of the series resistor with gate can be calculated according to this inrush current .
Best Wishes
Goldsmith