In the differential configuration, for the tail transistor, connect the bulk to the ground, so that the bulk and source are in the same potential. Whereby, for the input NMOS, you can apply the triple well transistor, so that you can tie bulk to source to minimize body effect. But normally, in desiging diff-amp, NMOS bulk is to connected to gnd.
If i connect the bulk of NMOS to ground, then my source will be at a differential potential than the bulk.doesnt it introduce body effect. I am using the normal n well process with p substrate. is there any method where i can reduce the body effect.