mstrdm
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Good time of the day everyone,
At the moment I am designing a system that uses transistors gate as a tunneling barrier and I am using BSIM4 model for this purpose. I noticed that is has four different parameters describing gate oxide thickness, i.e. toxe, toxp, toxm, toxref. What is more, in different files containing numerical values, physical thickness (toxp) is usually different from other three.
My question would be the following: is it possible to variate oxide thickness without touching other model parameters such as threshold voltage, etc.? If so, how big of a deviation from the "real" data will I get if I simply set all four parameters to be equal to each other? I am interested in thin oxide layers, ex. 1.4nm.
Thank You
At the moment I am designing a system that uses transistors gate as a tunneling barrier and I am using BSIM4 model for this purpose. I noticed that is has four different parameters describing gate oxide thickness, i.e. toxe, toxp, toxm, toxref. What is more, in different files containing numerical values, physical thickness (toxp) is usually different from other three.
My question would be the following: is it possible to variate oxide thickness without touching other model parameters such as threshold voltage, etc.? If so, how big of a deviation from the "real" data will I get if I simply set all four parameters to be equal to each other? I am interested in thin oxide layers, ex. 1.4nm.
Thank You