xshou
Member level 2
I encountered some design challenges and want to share it with my fellow experts. Actually it's an interesting topic for contest.
Given a high speed HBT process, all you can have are:
NPN bipolar transistor(number unlimited, ft=100G, beta=50), caps (MIM cap, tot<20pF), resistors( tot < 100k), inductors (tot < 5nH), supply (3.3v).
Goal: design a low speed amplifer with gain of 40dB, GBW of 10kHz.
Restriction: you can not use any external caps.
Background: I always think about making a low speed amplifier using high speed devices without external components (caps). Some people tried in LDO design, but not as the condition is not as dramatic as the one mentioned above.
Given a high speed HBT process, all you can have are:
NPN bipolar transistor(number unlimited, ft=100G, beta=50), caps (MIM cap, tot<20pF), resistors( tot < 100k), inductors (tot < 5nH), supply (3.3v).
Goal: design a low speed amplifer with gain of 40dB, GBW of 10kHz.
Restriction: you can not use any external caps.
Background: I always think about making a low speed amplifier using high speed devices without external components (caps). Some people tried in LDO design, but not as the condition is not as dramatic as the one mentioned above.