rissenaj
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Hi all,
I am planning to use high voltage transistors from XFAB XH035 process for a biomedical application. Output drive required is 18V and I am planning to use 18V drain NMOS and PMOS transistors with maximum rated Vgs and Vds of 18V for my application(Please see the attached pic).
My question is whether I can bias the HV-NMOS and HV-PMOS transistors correctly with a 3.3 V CMOS as my low to high voltage level shifter design is a stacked design using low voltage MOSFET devices and the low and high voltage control signals (applied to high voltage devices) switch between 0 to 3.3 and 14.7 to 18V.
I am planning to use high voltage transistors from XFAB XH035 process for a biomedical application. Output drive required is 18V and I am planning to use 18V drain NMOS and PMOS transistors with maximum rated Vgs and Vds of 18V for my application(Please see the attached pic).
My question is whether I can bias the HV-NMOS and HV-PMOS transistors correctly with a 3.3 V CMOS as my low to high voltage level shifter design is a stacked design using low voltage MOSFET devices and the low and high voltage control signals (applied to high voltage devices) switch between 0 to 3.3 and 14.7 to 18V.