Best Transistor for L-Band Power Amplifier Design Using ADS

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narayani

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I want to design Microwave Integrated Circuit (MIC) L- Band Power Amplifier at 1.2 -1.6 GHz. I have to get output power more than 30 W, efficiency more than 90% and peak output power of 1.5 kW. Which transistor I need to choose for getting above said parameter. Can I choose LDMOS MRF 284 or LDMOS MRF 282 or UMS custom GaAs HBT or Ericson Si LDMOS PTF 10135 or some other transistor.
Suggest me which is the better transistor.
 

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narayani said:
These are all discrete transistor datasheets. Which one is better for above said parameter whether GaN or LDMOS. Clarify it.
How to get Design Kit for these transistors? have we to request manufacturer for getting DK or PDK. Clarify it.
Click to expand...
If you intend to design a Power Amplifier, you have to know the differences between GaN and LDMOS.
Also...

Learn how to get a simulation model or design kit. Don't you see " Design Support" tab in related component's page ?? If you don't mind, please click the tab...
 

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