narayani
Full Member level 2
I want to design Microwave Integrated Circuit (MIC) L- Band Power Amplifier at 1.2 -1.6 GHz. I have to get output power more than 30 W, efficiency more than 90% and peak output power of 1.5 kW. Which transistor I need to choose for getting above said parameter. Can I choose LDMOS MRF 284 or LDMOS MRF 282 or UMS custom GaAs HBT or Ericson Si LDMOS PTF 10135 or some other transistor.
Suggest me which is the better transistor.
Suggest me which is the better transistor.