basic question on BJT

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ankitgarg0312

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1. how does bjt parameters (Ic,IE,IB,B,A) are effected by change in temperature?

2. do reverse saturation current depends on area of bjt cross section ?
 

http://hyperphysics.phy-astr.gsu.edu/HBASE/Electronic/transtemp.html

In general

1. Beta increases with temperature
2. VBE decreases about 7.5mV per degree Celsius increase in temp
3. Reverse saturation current doubles for every 10 degree C increase
4.low stability factor is desirable.

I think reverse saturation current would be more if the area of bjt is more..more area will definitely means more minority carrier in emitter and collector junctions..Please do confirm
 

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