How these figures are derived are based on a simplistic assumption of carrier distribution in the channel, and probably cannot be used for any practical use. The capacitance varies in the operating mode of the transistor, and a whole lot of other parameters.
All you have to know is that Cds is usually too small compared to the other capacitances and hence has the weakest effect, often ignored unless you are working on RF frequencies. Cgs is the dominant capacitance. Cgd in saturation is way smaller than Cgs due to pinch-off, and not 3/4 of Cgs as you have wrongly assumed. However, Cgd is important for transistors in an inverting configuration, where the Miller effect amplifies it by the gain, often such that it is more likely to form the dominant pole rather than transistor Cgs.