Argon is not simulated as it does not contribute electrically. You would typically use argon the pre-amorphise the surface being implanted.
So for simulation, skip the argon implant then use the "amorph" statement to tell the simulator the surface being implanted is amorphised and to ignore channeling effects.
Thank you for replying. Unfortunately, argon is not used here to reduce channeling. Argon is implanted using low energy to create traps for charge storage.
Then you would need to try match the trapping parameters to actual experiments. Silvaco (at least the versions I am aware of) cannot do this in the process models (Athena).