*******************************************************************************
* A = diode anode
* K = diode cathode
* C = BJT collector
* B = BJT base
* E = BJT emitter
.SUBCKT CNY17-1 A K C B E PARAMS: REL_CTR=1
* CNY17-1 from Motorola Optoelectronics data book Q3/93 - RPerez
D1 A D DCNY17 ;Gallium arsenide infrared emitting diode
Vsense D K 0 ;Diode Current sense -> IF
Hd R 0 Vsense 1
Rd R T 10K
Cd T 0 0.15n
* Gpcg models CTR
Gpcg C B TABLE ;Photodetector {IC@IF * (normalized CTR at IF)*REL_CTR/(Q1 BF)
+ {6m*(0.9277*V(T)^3-1.2381*V(T)^2+100.4332*V(T)-0.02771)*REL_CTR/400}
+ (0,0) (10,10)
Q1 C B E E QCNY17 ;phototransistor detector
.model DCNY17 D IS=1P N=1.948621 RS=1.560495 BV=6 IBV=10U
+ CJO=18.8P VJ=0.532794 M=0.27985 EG=1.424 TT=500N
* ISC controls dark current
* IKF controls high current gain
.model QCNY17 NPN IS=3.64P BF=400 NF=1.193293 BR=10 TF=2N TR=350n
+ CJE=5.16P VJE=0.99 MJE=0.2411274 CJC=18P VJC=0.597478 MJC=0.431978
+ ISC=0.207N VAF=65 IKF=0.09 ISS=0 CJS=7.74p VJS=0.61 MJS=0.31
.ends
*$
*******************************************************************************
* A = diode anode
* K = diode cathode
* C = BJT collector
* B = BJT base
* E = BJT emitter
.SUBCKT CNY17-2 A K C B E PARAMS: REL_CTR=1
* CNY17-2 from Motorola Optoelectronics data book Q3/93 - RPerez
D1 A D DCNY17 ;Gallium arsenide infrared emitting diode
Vsense D K 0 ;Diode Current sense -> IF
Hd R 0 Vsense 1
Rd R T 10K
Cd T 0 0.25n
* Gpcg models CTR
Gpcg C B TABLE ;Photodetector {IC@IF * (normalized CTR at IF)*REL_CTR/(Q1 BF)
+ {10m*(0.9277*V(T)^3-1.2381*V(T)^2+100.4332*V(T)-0.02771)*REL_CTR/400}
+ (0,0) (10,10)
Q1 C B E QCNY17 ;phototransistor detector
.model DCNY17 D IS=1P N=1.948621 RS=1.560495 BV=6 IBV=10U
+ CJO=18.8P VJ=0.532794 M=0.27985 EG=1.424 TT=500N
* ISC controls dark current
* IKF controls high current gain
.model QCNY17 NPN IS=3.64P BF=400 NF=1.193293 BR=10 TF=1N TR=30n
+ CJE=5.16P VJE=0.99 MJE=0.2411274 CJC=18P VJC=0.597478 MJC=0.431978
+ ISC=0.207N VAF=65 IKF=0.09 ISS=0 CJS=7.74p VJS=0.61 MJS=0.31
.ends
*$
*******************************************************************************
* A = diode anode
* K = diode cathode
* C = BJT collector
* B = BJT base
* E = BJT emitter
.SUBCKT CNY17-3 A K C B E PARAMS: REL_CTR=1
* CNY17-3 from Motorola Optoelectronics data book Q3/93 - RPerez
D1 A D DCNY17 ;Gallium arsenide infrared emitting diode
Vsense D K 0 ;Diode Current sense -> IF
Hd R 0 Vsense 1
Rd R T 10K
Cd T 0 0.27n
* Gpcg models CTR
Gpcg C B TABLE ;Photodetector {IC@IF * (normalized CTR at IF)/(Q1 BF)
+ {15m*(0.9277*V(T)^3-1.2381*V(T)^2+100.4332*V(T)-0.02771)*REL_CTR/400}
+ (0,0) (10,10)
Q1 C B E QCNY17 ;phototransistor detector
.model DCNY17 D IS=1P N=1.948621 RS=1.560495 BV=6 IBV=10U
+ CJO=18.8P VJ=0.532794 M=0.27985 EG=1.424 TT=500N
* ISC controls dark current
* IKF controls high current gain
.model QCNY17 NPN IS=3.64P BF=400 NF=1.193293 BR=10 TF=13N TR=375n
+ CJE=5.16P VJE=0.99 MJE=0.2411274 CJC=18P VJC=0.597478 MJC=0.431978
+ ISC=0.207N VAF=65 IKF=0.09 ISS=0 CJS=7.74p VJS=0.61 MJS=0.31
.ends
*$