CMOS-Tangram
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Hello everyone, this is my first question in this forum. Thanks in advance to all who answer.
Introduction:
In the most basic noise models for CMOS transistors, thermal noise related to the transistor channel and flicker noise associated with the transistor gate capacitance are included.
The thermal noise is modeled as a current source connected between drain and source, whereas the flicker noise is modeled as a voltage source connected to the gate of the transistor.
When the output noise of a common source amplifier is calculated, CMOS flicker noise becomes noise current by the factor gm of the transistor. Then, from thermal noise current and "flicker noise current ", the output noise is obtained using the small signal model.
Question:
By performing the same procedure to calculate the input noise, the "real" noise, not the equivalent (Output Noise / Gain), which can be measured, shall consist only on flicker noise? If so, the channel thermal noise does not move to the gate of the transistor?
As I said before, thanks to all in advance.
Introduction:
In the most basic noise models for CMOS transistors, thermal noise related to the transistor channel and flicker noise associated with the transistor gate capacitance are included.
The thermal noise is modeled as a current source connected between drain and source, whereas the flicker noise is modeled as a voltage source connected to the gate of the transistor.
When the output noise of a common source amplifier is calculated, CMOS flicker noise becomes noise current by the factor gm of the transistor. Then, from thermal noise current and "flicker noise current ", the output noise is obtained using the small signal model.
Question:
By performing the same procedure to calculate the input noise, the "real" noise, not the equivalent (Output Noise / Gain), which can be measured, shall consist only on flicker noise? If so, the channel thermal noise does not move to the gate of the transistor?
As I said before, thanks to all in advance.